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INTEGRATED CIRCUITS
74F189A 64-bit TTL bipolar RAM, inverting (3-State)
Product specification IC15 Data Handbook 1990 Feb 23
Philips Semiconductors
Philips Semiconductors
Product specification
64-bit TTL bipolar RAM, inverting (3-State)
74F189A
FEATURES
* High speed performance * Replaces 74F189 * Address access time: 8ns max vs 28ns for 74F189 * Power dissipation: 4.3mW/bit * Schottky clamp TTL * One chip enable * Inverting outputs (for non-inverting outputs see 74F219A) * 3-State outputs * 74F189A in 150 mil wide SO is preferred options for new designs
DESCRIPTION
The 74F189A is a high speed, 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to minimize loading and
are fully decoded on chip. The outputs are in high impedance state whenever the chip enable (CE) is high. The outputs are active only in the READ mode (WE = high) and the output data is the complement of the stored data. TYPICAL SUPPLY CURRENT ( TOTAL) 55mA
TYPE 74F189A
TYPICAL ACCESS TIME 5.0ns
ORDERING INFORMATION
ORDER CODE DESCRIPTION COMMERCIAL RANGE VCC = 5V 10%, Tamb = 0C to +70C 16-pin plastic Dual In-line Package 16-pin plastic Small Outline (150mil) N74F189AN N74F189AD SOT38-4 SOT109-1 DRAWING NUMBER
INPUT AND OUTPUT LOADING AND FAN OUT TABLE
PINS D0 - D3 A0 - A3 CE WE Q0 - Q3 Data inputs Address inputs Chip enable input (active low) Write enable input (active low) Data outputs DESCRIPTION 74F (U.L.) HIGH/LOW 1.0/1.0 1.0/1.0 1.0/2.0 1.0/2.0 150/40 LOAD VALUE HIGH/LOW 20A/0.6mA 20A/0.6mA 20A/1.2mA 20A/1.2mA 3mA/24mA
NOTE: One (1.0) FAST unit load is defined as: 20A in the high state and 0.6mA in the low state.
PIN CONFIGURATION
A0 1 CE 2 WE 3 D0 4 Q0 5 D1 6 Q1 7 GND 8 16 V CC 15 A1 14 A2 13 A3 12 D3 11 Q3 10 D2 9 Q2
LOGIC SYMBOL
4 6 10 12
D0 D1 D2 D3 1 15 14 13 2 3 A0 A1 A2 A3 CE WE Q0 Q1 Q2 Q3
VCC = pin 16 GND = pin 8
5
7
9
11
SF00299
SF00300
1990 Feb 23
2
853-1309 98908
Philips Semiconductors
Product specification
64-bit TTL bipolar RAM, inverting (3-State)
74F189A
IEC/IEEE SYMBOL
1 15 14 13 2 3 1 G1 1 EN [READ] 1 C2 [WRITE] A,2D A 5 7 9 11 RAM 16X4 0 A 0 15
FUNCTION TABLE
INPUTS CE L L H H WE H L L X Dn X L H X OUTPUT Qn Complement of stored data High impedance High impedance High impedance OPERATING MODE Read Write "0" Write "1" Disable input
4 6 10 12
SF00301
NOTES: H = High voltage level L = Low voltage level X = Don't care
LOGIC DIAGRAM
D0 D1 D2 D3 4 6 10 12 3 Data buffers 2 WE CE
A0 A1 A2 A3
1 15 14 13 Decoder Drivers Address Decoder 16-word x 4-bit memory cell array
Output buffers 5 VCC = Pin 16 GND = Pin 8 7 9 11
Q0 Q1 Q2 Q3
SF00302
ABSOLUTE MAXIMUM RATINGS
(Operation beyond the limit set forth in this table may impair the useful life of the device. Unless otherwise noted these limits are over the operating free air temperature range.) SYMBOL VCC VIN IIN VOUT IOUT Tamb Tstg Supply voltage Input voltage Input current Voltage applied to output in high output state Current applied to output in low output state Operating free air temperature range Storage temperature range PARAMETER RATING -0.5 to +7.0 -0.5 to +7.0 -30 to +5 -0.5 to VCC 48 0 to +70 -65 to +150 UNIT V V mA V mA
C C
1990 Feb 23
3
Philips Semiconductors
Product specification
64-bit TTL bipolar RAM, inverting (3-State)
74F189A
RECOMMENDED OPERATING CONDITIONS
LIMITS SYMBOL VCC VIH VIL IIk IOH IOL Tamb Supply voltage High-level input voltage Low-level input voltage Input clamp current High-level output current Low-level output current Operating free air temperature range 0 PARAMETER MIN 4.5 2.0 0.8 -18 -3 24 +70 NOM 5.0 MAX 5.5 UNIT TA = -40 to +85C V V V mA mA mA
C
DC ELECTRICAL CHARACTERISTICS
(Over recommended operating free-air temperature range unless otherwise noted.) SYMBOL PARAMETER TEST CONDITIONS1 MIN VOH High-level output voltage VCC = MIN, VIL = MAX VIH = MIN, IOH = MAX VOL Low-level output voltage VCC = MIN, VIL = MAX VIH = MIN, IOL = MAX VIK II IIH IIL Input clamp voltage Input current at maximum input voltage High-level input current Low-level input current others CE, WE IOZH IOZL IOS ICC CIN COUT Offset output current, high-level voltage applied Offset output current, low-level voltage applied Short-circuit output current3 Supply current (total) Input capacitance Output capacitance VCC = MAX, VI = 2.7V VCC = MAX, VI = 0.5V VCC = MAX VCC = MAX, CE = WE = GND VCC = 5V, VIN = 2.0V VCC = 5V, VOUT = 2.0V -60 55 4 7 VCC = MIN, II = IIK VCC = MAX, VI = 7.0V VCC = MAX, VI = 2.7V VCC = MAX, VI = 0.5V LIMITS TYP2 MAX V 3.4 0.35 0.35 -0.73 0.50 0.50 -1.2 100 20 -0.6 -1.2 50 -50 -150 80 V V V V UNIT
10%VCC 5%VCC 10%VCC 5%VCC
2.4 2.7
A A
mA mA
A A
mA mA pF pF
NOTES: 1. For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions for the applicable type. 2. All typical values are at VCC = 5V, Tamb = 25C. 3. Not more than one output should be shorted at a time. For testing IOS, the use of high-speed test apparatus and/or sample-and-hold techniques are preferable in order to minimize internal heating and more accurately reflect operational values. Otherwise, prolonged shorting of a high output may raise the chip temperature well above normal and thereby cause invalid readings in other parameter tests. In any sequence of parameter tests, IOS tests should be performed last.
1990 Feb 23
4
Philips Semiconductors
Product specification
64-bit TTL bipolar RAM, inverting (3-State)
74F189A
AC ELECTRICAL CHARACTERISTICS
LIMITS Tamb = +25C SYMBOL PARAMETER TEST CONDITION VCC = +5.0V CL = 50pF, RL = 500 MIN tPLH tPHL tPZH tPZL tPHZ tPLZ tPZH tPZL tPHZ tPLZ Disable time CE to Qn Write recovery time Disable time WE to Qn Enable time WE to Qn Access time Propagation delay An to Qn Enable time CE to Qn Waveform 1 Waveform 2 Waveform 3 Waveform 4 Waveform 4 2.5 2.0 2.0 2.0 2.5 1.5 2.0 2.5 3.5 1.5 TYP 5.0 4.5 3.5 4.0 4.5 3.0 4.0 4.5 5.5 3.5 MAX 8.0 8.0 6.0 7.0 7.0 5.5 6.5 7.5 8.5 6.5 Tamb = 0C to +70C VCC = +5.0V 10% MIN 2.5 2.0 1.5 2.0 2.0 1.5 2.0 2.5 3.0 1.5 MAX 8.0 8.0 7.0 7.5 8.0 6.0 7.0 8.0 9.0 7.0 ns ns ns ns ns UNIT CL = 50pF, RL = 500
AC SETUP REQUIREMENT
LIMITS Tamb = +25C SYMBOL PARAMETER TEST CONDITION VCC = +5.0V CL = 50pF, RL = 500 MIN tsu(H) tsu(L) th(H) th(L) tsu(H) tsu(L) th(H) th(L) tsu(L) th(L) tw(L) Setup time, high or low An to WE Hold time, high or low An to WE Setup time, high or low Dn to WE Hold time, high or low Dn to WE Setup time, low CE (falling edge) to WE (falling edge) Hold time, low WE (falling edge) to WE (rising edge) Pulse width, low WE Waveform 4 Waveform 4 Waveform 4 Waveform 4 Waveform 4 Waveform 4 Waveform 4 4.5 4.5 0 0 7.5 6.5 0 0 0 6.5 7.0 TYP MAX Tamb = 0C to +70C VCC = +5.0V 10% MIN 5.0 5.0 0 0 9.0 8.0 0 0 0 7.5 8.0 MAX ns ns ns ns ns ns ns UNIT CL = 50pF, RL = 500
AC WAVEFORMS FOR READ CYCLES
An VM tPHL
Qn
VM tPLH
NOTE:
For all waveforms, VM = 1.5V. Waveform 1. Read cycle, address access time
SF00303
1990 Feb 23
5
Philips Semiconductors
Product specification
64-bit TTL bipolar RAM, inverting (3-State)
74F189A
CE
VM tPZH
Qn
VM tPZL
NOTE:
For all waveforms, VM = 1.5V. Waveform 2. Read cycle, chip enable access time
SF00304
CE
VM tPHZ
Qn
VM tPLZ
NOTE:
For all waveforms, VM = 1.5V. Waveform 3. Read cycle, chip disable time
SF00305
AC WAVEFORMS FOR WRITE CYCLE
An VM tsu (H or L) th (H or L) VM
Dn
VM
VM
VM
tsu ( L)
th (H or L) VM
CE
VM tsu (H or L) tw ( L) th ( L)
WE
VM
VM
tPHZ
tPZH
Qn
Hi-Z
VM tPLZ tPZL VM
NOTE:
For all waveforms, VM = 1.5V. Waveform 4. Write cycle
SF00306
1990 Feb 23
6
Philips Semiconductors
Product specification
64-bit TTL bipolar RAM, inverting (3-State)
74F189A
TEST CIRCUIT AND WAVEFORM
VCC NEGATIVE PULSE VIN PULSE GENERATOR RT D.U.T. VOUT 90% VM 10% tTHL (tf ) CL RL tw VM 10% tTLH (tr ) 0V 90% AMP (V)
tTLH (tr ) 90% POSITIVE PULSE VM 10% tw
tTHL (tf ) AMP (V) 90% VM 10% 0V
Test Circuit for Totem-Pole Outputs DEFINITIONS: RL = Load resistor; see AC ELECTRICAL CHARACTERISTICS for value. CL = Load capacitance includes jig and probe capacitance; see AC ELECTRICAL CHARACTERISTICS for value. RT = Termination resistance should be equal to ZOUT of pulse generators.
Input Pulse Definition INPUT PULSE REQUIREMENTS family amplitude VM 74F 3.0V 1.5V rep. rate 1MHz tw 500ns tTLH 2.5ns tTHL 2.5ns
SF00006
1990 Feb 23
7
Philips Semiconductors
Product specification
64-bit TTL bipolar RAM, inverting (3-State)
74F189A
DIP16: plastic dual in-line package; 16 leads (300 mil)
SOT38-4
1990 Feb 23
8
Philips Semiconductors
Product specification
64-bit TTL bipolar RAM, inverting (3-State)
74F189A
SO16: plastic small outline package; 16 leads; body width 3.9 mm
SOT109-1
1990 Feb 23
9
Philips Semiconductors
Product specification
64-bit TTL bipolar RAM, inverting (3-State)
74F189A
Data sheet status
Data sheet status Objective specification Preliminary specification Product specification Product status Development Qualification Definition [1] This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make chages at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
Production
[1] Please consult the most recently issued datasheet before initiating or completing a design.
Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Disclaimers
Life support -- These products are not designed for use in life support appliances, devices or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088-3409 Telephone 800-234-7381 (c) Copyright Philips Electronics North America Corporation 1998 All rights reserved. Printed in U.S.A. print code Document order number: Date of release: 10-98 9397-750-05092
Philips Semiconductors
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